Soft error suppressing resistance load type SRAM cell

Details Soft error suppressing resistance load type SRAM cell Soft error suppressing resistance load type SRAM cell

1995-10-30

1998-06-02

Yoo, Do Hyun

Static information storage and retrieval

Systems using particular element

Flip-flop

365 51, 365 63, 365100, 365148, G11C 1100

Patent

active

057611130

ABSTRACT:
In an SRAM cell including two cross-coupled inverters each having a first resistance element and a drive MOS transistor, a second resistance element is connected between the first and the drive MOS transistor. A gate electrode of the drive MOS transistor of one of the inverters is connected between the first and second resistance elements of the other.

REFERENCES:
patent: 5452246 (1995-09-01), Kawashima

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