Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-04-05
1994-08-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257429, 257544, 257903, H01L 2702
Patent
active
053389638
ABSTRACT:
Soft error immunity of a storage cell is greatly increased by division of a storage node into at least two portions and location of those portions on opposite sides of an isolation structure, such as a well of a conductivity type opposite to that of the substrate in which transistors of the memory cell may also be formed. The isolation structure thus limits collection of charge to only one of the portions of the storage node and reduces charge collection efficiency to a level where a critical amount of charge cannot be collected in all but a statistically negligible number of cases when such charge is engendered by impingement by ionizing radiation, such as energetic alpha particles. The layout of the memory cell having this feature also advantageously provides a simplified topology for the formation of additional ports comprising word line access transistors and bit lines.
REFERENCES:
patent: 4287574 (1981-09-01), Uchida
patent: 4524377 (1985-06-01), Eguchi
patent: 5189640 (1993-02-01), Huard
Klaasen William A.
Wang Wen-Yuan
Crane Sara W.
International Business Machines - Corporation
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