Soft ashing method for removing fluorinated photoresists layers

Details Soft ashing method for removing fluorinated photoresists layers Soft ashing method for removing fluorinated photoresists layers

1996-06-07

1997-12-30

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430329, 438705, 438738, G03F 736

Patent

active

057028699

ABSTRACT:
A method for removing from a semiconductor substrate a partially fluorinated photoresist layer. There is first formed upon a semiconductor substrate a partially fluorinated photoresist layer. The partially fluorinated photoresist layer has a fluorinated surface layer of the partially fluorinated photoresist layer and an underlying non-fluorinated remainder layer of the partially fluorinated photoresist layer. The fluorinated surface layer of the partially fluorinated photoresist layer is then removed through a first etch method. The first etch method employs an oxygen containing plasma at a radio frequency power no greater than about 500 watts and a temperature no greater than about 120 degrees centigrade. Finally, the underlying non-fluorinated remainder layer of the partially fluorinated photoresist layer is removed through a second etch method.

REFERENCES:
patent: 4810601 (1989-03-01), Allen
patent: 5443941 (1995-08-01), Bariya et al.
patent: 5543252 (1996-08-01), Shibata

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