SO 2 treatment of oxidized CuO for copper sulfide formation...

Details SO 2 treatment of oxidized CuO for copper sulfide formation... SO 2 treatment of oxidized CuO for copper sulfide formation...

2006-10-03

2006-10-03

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S099000, C438S687000

Reexamination Certificate

active

07115440

ABSTRACT:
Disclosed are methods of making memory cells and semiconductor devices containing the memory cells. The methods involve oxidizing a portion of a copper containing electrode to form a copper oxide layer; contacting the copper oxide layer with at least one of a sulfur containing gas or plasma to form a CuS layer; forming an organic semiconductor over the CuS layer; and forming an electrode over the organic semiconductor. Such devices containing the memory cells are characterized by light weight and robust reliability.

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