SnO 2 ISFET device, manufacturing method, and methods and...

Details SnO 2 ISFET device, manufacturing method, and methods and... SnO 2 ISFET device, manufacturing method, and methods and...

2006-03-07

2006-03-07

Zarabian, Amir (Department: 2822)

Electricity: measuring and testing

Determining nonelectric properties by measuring electric...

C324S076110, C257S290000

Reexamination Certificate

active

07009376

ABSTRACT:
A SnO2ISFET device and manufacturing method thereof. The present invention prepares SnO2as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2ISFET for different pH and hysteresis width of the SnO2ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2ISFET.

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