Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Reexamination Certificate
2006-03-28
2006-03-28
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
C257S310000, C257S316000, C257S508000, C257S633000, C438S608000
Reexamination Certificate
active
07019343
ABSTRACT:
A SnO2ISFET device and manufacturing method thereof. The present invention prepares SnO2as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2ISFET for different pH and hysteresis width of the SnO2ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2ISFET.
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Chou Jung-Chuan
Wang Yii Fang
Birch & Stewart Kolasch & Birch, LLP
National Yunlin University of Science and Technology
Perkins Pamela E
Zarabian Amir
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