Smooth fin topology in a FinFET device

Details Smooth fin topology in a FinFET device Smooth fin topology in a FinFET device

2006-09-26

2006-09-26

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S900000

Reexamination Certificate

active

07112847

ABSTRACT:
A semiconductor device includes a semiconductor fin formed on an insulator and sidewall spacers formed adjacent the sides of the fin. A gate material layer is formed over the fin and the sidewall spacers and etched to form a gate. The presence of the sidewall spacers causes a topology of the gate material layer to smoothly transition over the fin and the first and second sidewall spacers.

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