SMI memory read data capture margin characterization...

Static information storage and retrieval – Read/write circuit – Testing

Reexamination Certificate

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Details

C365S191000, C365S194000, C365S233500

Reexamination Certificate

active

07830737

ABSTRACT:
The present invention is directed to margin characterization of memory devices, such as interface ASICs connected to SDRAM. The circuits and method perform margin characterization on a chip during wafer test; however the characterization could also be performed at module test or in a system.

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patent: 01/71726 (2001-09-01), None

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