Smart verify for multi-state memories

Details Smart verify for multi-state memories Smart verify for multi-state memories

2006-07-04

2006-07-04

Chung, Phung My (Department: 2133)

Error detection/correction and fault detection/recovery

Pulse or data error handling

Memory testing

Reexamination Certificate

active

07073103

ABSTRACT:
The present invention presents a “smart verify” technique whereby multi-state memories are programmed using a verify-results-based dynamic adjustment of the multi-states verify range for sequential-state-based verify implementations. This technique can increase multi-state write speed while maintaining reliable operation within sequentially verified, multi-state memory implementations. It does so by providing “intelligent” element to minimize the number of sequential verify operations for each program/verify/lockout step of the write sequence. In an exemplary embodiment of the write sequence for the multi-state memory during a program/verify cycle sequence of the selected storage elements, at the beginning of the process only the lowest state of the multi-state range to which the selected storage elements are being programmed is checked during the verify phase. Once the first storage state is reached by one or more of the selected elements, the next state in the sequence of multi-states is added to the verify process.

REFERENCES:
patent: 5920507 (1999-07-01), Takeuchi et al.
patent: 6243290 (2001-06-01), Kurata et al.
patent: 6324121 (2001-11-01), Banks
patent: 6404675 (2002-06-01), Banks
patent: 6522580 (2003-02-01), Chen et al.
patent: 6538922 (2003-03-01), Khalid et al.
patent: 6745286 (2004-06-01), Staub et al.
patent: 6785164 (2004-08-01), Gonzalez et al.
patent: 2001/0040824 (2001-11-01), Banks
patent: 0 856 850 (1998-08-01), None
International Search Report mailed Apr. 23, 2004.
Notification of Transmittal of the International Search Report or the Declaration, International Application No. PCT/US03/38076 for SanDisk Corporation mailed Apr. 23, 2004.

Affiliated with

Also associated with

Rating

Smart verify for multi-state memories does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Smart verify for multi-state memories, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Smart verify for multi-state memories will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3527512