Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2007-10-02
2007-10-02
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S205000, C365S196000, C365S233100
Reexamination Certificate
active
10876802
ABSTRACT:
A method and a circuit are given, to implement and realize power saving Sense Electronics Endowed (SEE) memory using modified memory read cycles, named as Smart Memory Readout (SMR). In an SMR-mode read cycle, the memory is only active a small fraction of a clock cycle thus saving power. In this small fraction where the memory is enabled by SMR-mode read, the memory content is read to a shadow register and held until read by the microcontroller. Said circuit and method are designed in order to be implemented with a very economic number of components, capable to be realized with modern integrated circuit technologies.
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Ackerman Stephen B.
Dialog Semiconductor GmbH
Le Thong Q.
Saile Ackerman LLC
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