Small grain size, conformal aluminum interconnects and...

Details Small grain size, conformal aluminum interconnects and... Small grain size, conformal aluminum interconnects and...

2006-04-27

2010-06-15

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S642000, C438S643000, C438S680000, C438S688000, C257SE21290

Reexamination Certificate

active

07737024

ABSTRACT:
A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.

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