Small contacts for ultra large scale integration semiconductor d

Details Small contacts for ultra large scale integration semiconductor d Small contacts for ultra large scale integration semiconductor d

1997-06-12

1999-02-23

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438639, 438673, 438666, H01L 2144

Patent

active

058743596

ABSTRACT:
A method for fabricating very narrow contacts on semiconductor substrate for increasing the packing density of devices on Ultra Large Scale Integration (ULSI) circuits was achieved. The method involves using conventional photolithographic techniques and anisotropic plasma etching to etch openings in a conducting layer and partially etch into an underlying planar insulating layer that covers and isolates the devices and device contact areas. Another conformal conducting layer is deposited on the substrate and in the openings and then etched back to form sidewall spacers in the openings. Using the original conducting layer and the sidewall spacers as an etch mask, the planar insulating layer is anisotropically etched within the sidewall spacers to form very narrow (small) contact opening to the desired device contact areas. Still another conducting layer is then deposited to fill the very narrow contact openings making electrical contact to the device contact areas, and then the conducting layers are patterned to form the next level of connecting metallurgy.

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