Slurry for CMP, polishing method and method of manufacturing...

Details Slurry for CMP, polishing method and method of manufacturing... Slurry for CMP, polishing method and method of manufacturing...

2006-06-13

2006-06-13

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C438S693000

Reexamination Certificate

active

07060621

ABSTRACT:
Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2by weight, wherein d1, d2, w1and w2are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1and w2concurrently meet following conditions (C) and (D):in-line-formulae description="In-line Formulae" end="lead"?3≦d2/d1≦8  (A)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?0.7≦w1/(w1+w2)≦0.97  (B)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?3≦d2/d1≦5  (C)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?0.7≦w1/(w1+w2)≦0.9.  (D)in-line-formulae description="In-line Formulae" end="tail"?

REFERENCES:
patent: 5904159 (1999-05-01), Kato et al.
patent: 6551175 (2003-04-01), Koichi et al.
patent: 2001/0018270 (2001-08-01), Tsuchiya et al.
patent: 2002/0023389 (2002-02-01), Minamihaba et al.
patent: 2003/0017786 (2003-01-01), Minamihaba et al.

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