Slurry for chemical mechanical polishing process and method...

Details Slurry for chemical mechanical polishing process and method... Slurry for chemical mechanical polishing process and method...

2007-03-27

2007-03-27

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C051S307000

Reexamination Certificate

active

10639541

ABSTRACT:
A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.

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