Slurry filling a recess formed during semiconductor fabrication

Details Slurry filling a recess formed during semiconductor fabrication Slurry filling a recess formed during semiconductor fabrication

1997-07-23

2000-05-30

Gulakowski, Randy

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

216 38, 438763, 438787, 438795, H01L 21463

Patent

active

060690852

ABSTRACT:
The present invention advantageously provides a method for filling a recess with a slurry that exhibits electrical properties similar to those of the structure which has the recess. The topological surface that includes the recess may be placed adjacent to a pad on which the slurry is disposed. The pad may be rotated to force the slurry into the recess. After the slurry is densely packed into the recess, the slurry may be cleaned from the topological surface exclusive of the recess. The slurry may be heated in order to remove the liquid portion of the slurry. The resulting topological surface is planar since a recess no longer exists therein. The technique hereof may be especially useful for filling a recess that forms in the surface of a plug or in the surface of a fill dielectric disposed within a trench. Such recesses may form as a result of CMP or etchback.

REFERENCES:
patent: 5064683 (1991-11-01), Poon et al.
patent: 5219462 (1993-06-01), Bruxvoort et al.

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