Slurry compositions for selectively polishing silicon...

Details Slurry compositions for selectively polishing silicon... Slurry compositions for selectively polishing silicon...

2008-07-03

2011-10-25

Green, Anthony (Department: 1731)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C051S307000, C051S308000, C438S691000, C438S692000

Reexamination Certificate

active

08043970

ABSTRACT:
Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.

REFERENCES:
patent: 6239032 (2001-05-01), Nakamura et al.
patent: 6746314 (2004-06-01), Kim et al.
patent: 2004/0132305 (2004-07-01), Nishimoto et al.
patent: 2004-273547 (2004-09-01), None
patent: 2006-120728 (2006-05-01), None
patent: 10-2004-0055042 (2004-06-01), None
Machine translation of JP 2004-273547 (Sep. 3, 2004).

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