Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-06-26
2011-11-01
Norton, Nadine G (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C252S079100, C252S079200, C252S079300, C252S079400, C216S088000, C438S689000, C438S691000, C438S692000, C438S693000
Reexamination Certificate
active
08048808
ABSTRACT:
A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO3−) and a sulfate ion (OSO3−), and an acidic aqueous solution.
REFERENCES:
patent: 6540935 (2003-04-01), Lee et al.
patent: 7247566 (2007-07-01), Carter et al.
patent: 7842191 (2010-11-01), Minamihaba et al.
patent: 2007/0298611 (2007-12-01), Bian
patent: 2000-109818 (2000-04-01), None
patent: 2007-053214 (2007-03-01), None
patent: 10-2002-0077636 (2002-10-01), None
patent: 10-2004-0055042 (2004-06-01), None
patent: 0495975 (2005-06-01), None
Han Sang-Yeob
Hong Chang-Ki
Lee Jae-Dong
Lee Jong-Won
Yoon Bo-Un
Angadi Maki A
Lee & Morse P.C.
Norton Nadine G
Samsung Electronics Co,. Ltd.
LandOfFree
Slurry compositions for polishing metal, methods of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Slurry compositions for polishing metal, methods of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Slurry compositions for polishing metal, methods of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4277692