Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-08-16
2005-08-16
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S694000, C438S692000, C510S175000, C510S312000, C252S186390, C252S186380, C252S079100
Reexamination Certificate
active
06930054
ABSTRACT:
Disclosed herein are slurry compositions for use in CMP(chemical mechanical polishing) process of metal wiring in manufacturing semiconductor devices, comprising a peroxide, an inorganic acid, a propylenediaminetetraacetate(PDTA)-metal complex, a carboxylic acid, a metal oxide powder, and de-ionized water, wherein the PDTA-metal complex plays a major role in improving overall polishing performance and reproducibility thereof by preventing abraded tungsten oxide from readhesion onto the polished surface, as well as in improving the dispersion stability of the slurry composition.
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Do Won Joong
Hah Sang Rok
Hong Chang Ki
Lee Jae Seok
Lee Jong Won
Cheil Industries Inc.
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
Smith Matthew
Yevsikov Victor V
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