Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2004-05-11
2010-11-16
Vinh, Lan (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C216S091000
Reexamination Certificate
active
07833908
ABSTRACT:
A slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device that utilizes the same are disclosed. The slurry composition of the present invention is aimed at compensating the nanotopography effect during chemical mechanical polishing process of the oxide layer formed on the surface of the wafer, and contains abrasive particles and an additive, wherein the size of the abrasive particles and the concentration of the additive are controlled within predetermined ranges in order to control the deviation of thickness (OTD) of the oxide layer below a certain level after the chemical mechanical polishing process.
REFERENCES:
patent: 6436835 (2002-08-01), Kido et al.
patent: 6537914 (2003-03-01), Park et al.
patent: 6786964 (2004-09-01), Onishi et al.
patent: 6875701 (2005-04-01), Yanagisawa et al.
patent: 6964923 (2005-11-01), Ronay
patent: 7029509 (2006-04-01), Kim et al.
patent: 2001/0013507 (2001-08-01), Hosali et al.
patent: 2002/0151252 (2002-10-01), Kawase et al.
patent: 2003/0124959 (2003-07-01), Schroeder et al.
patent: 2000-243733 (2000-09-01), None
patent: 2001-7195 (2001-01-01), None
patent: 2003-059868 (2003-02-01), None
Form PCT/IB/306, for PCT/JP2004/00659.
Kim et al., “Influence of the electrokinetic behaviors of abrasive ceria particles and the deposited plasma-enhanced tetraethylorthosilicate and chemically vapor deposited Si3N4films in an aqueous medium on chemical mechanical planarization for shallow trench isolation”, J. Mater. Res., vol. 18, No. 9, pp. 2163-2169, Sep. 2003.
Japanese Office Action dated Dec. 9, 2008 for Appln. No. 2005-506057.
Notice of Reasons for Rejection for Japanese Application No. 2005-506057 dated Aug. 4, 2009.
Kang Hyun Goo
Katoh Takeo
Kim Sung Jun
Lee Won Mo
Paik Un Gyu
Hanyang Hak Won Co.
Pillsbury Winthrop Shaw & Pittman LLP
Sumco Corporation
Vinh Lan
LandOfFree
Slurry composition for chemical-mechanical polishing capable... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Slurry composition for chemical-mechanical polishing capable..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Slurry composition for chemical-mechanical polishing capable... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4241041