Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-03-11
2008-10-28
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C051S307000, C451S056000
Reexamination Certificate
active
07442646
ABSTRACT:
A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming metal wiring using the slurry. The slurry may include a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film. The CMP method and method of forming metal wiring may employ one or two slurries with at least one of the slurries including at least one defect inhibitor.
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Korean Office Action issued: Jan. 31, 2006 w/English Translation.
Hong Chang-Ki
Kim Sung-Jun
Lee Jae-Dong
Park Jeong-Heon
Harness & Dickey & Pierce P.L.C.
Huynh Andy
Samsung Electronics Co,. Ltd.
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