Slurries for chemical mechanically polishing copper containing m

Details Slurries for chemical mechanically polishing copper containing m Slurries for chemical mechanically polishing copper containing m

1993-03-29

1994-10-11

Hearn, Brian E.

Compositions

Etching or brightening compositions

252 792, C09K 1300

Patent

active

053544900

ABSTRACT:
A semiconductor processing method of chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H.sub.2 0, a solid abrasive material, and a third component selected from the group consisting of HNO.sub.3, H.sub.2 SO.sub.4, and AgNO.sub.3 or mixtures thereof; and b) chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate with the slurry. Such slurry also constitutes part of the invention. Such slurry may also contain an additional oxidant selected from the group consisting of H.sub.2 0.sub.2, HOCl, KOCl, KMnO.sub.4 and CH.sub.3 COOH or mixtures thereof to form a copper oxide passivating-type layer at the copper surface.

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