Slurries and methods for chemical mechanical polish of aluminum

Details Slurries and methods for chemical mechanical polish of aluminum Slurries and methods for chemical mechanical polish of aluminum

1995-12-21

1997-12-23

Breneman, R. Bruce

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

216 89, 216100, 216102, 216103, 216104, 216108, 216109, 1566361, 1566521, 156345, 252 791, 106 3, 51308, 437228, C23F 300, C23F 144

Patent

active

057003831

ABSTRACT:
Slurries and methods for the chemical mechanical polishing of thin films used in integrated circuit manufacturing are described. A first slurry comprises an oxidant, such as water, a halogen, such as fluorine, an abrasive, such as silica, and a chelating agent, such as citric acid, and has a pH between four and nine. The first slurry is ideal for the chemical mechanical polish of an aluminum film. Another slurry comprises an abrasive, such as silica, and an acid, such as citric acid, and has a pH of approximately three. The second slurry is ideal for the chemical mechanical polish of titanium aluminide and is compatible with the first slurry.

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