Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-06-19
2007-06-19
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257SE21170, C257SE21218
Reexamination Certificate
active
10803453
ABSTRACT:
A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.
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Devine Daniel J.
George Rene
Kadavanich Andreas
Savas Stephen E.
Shan Hongching
Ghyka Alexander
Mattson Technology Inc.
Pritzkau Patent Group LLC
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