Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1989-05-23
1990-02-20
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156644, 156646, 156651, 156653, 156655, 156657, 1566591, 20419236, 20419237, 437195, 437203, 437238, 437241, B44C 122, C03C 1500, C03C 2506, B29C 3700
Patent
active
049023772
ABSTRACT:
A method for etching vias having sloped sidewalls is provided, wherein the vias are formed in an interlayer dielectric formed on top of an interconnect layer using a patterned photoresist film as a mask. A top portion of the via is formed with a wet etch process which isotropically undercuts the masking film thereby creating a sloped sidewall. A bottom portion of the via is formed by a dry etch process comprising the steps of alternating between a number of isotropic mask erosion steps and a number of anisotropic dielectric etch steps, so that the interlayer dielectric exposed to the anisotropic etch by the mask opening is enlarged with each mask erosion step. Thus, a slope is created on the dry etched portion of the via sidewall as well as the wet etched portion of the via sidewall.
REFERENCES:
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4698128 (1987-10-01), Berglund et al.
patent: 4715930 (1987-12-01), Diem
patent: 4832788 (1989-05-01), Nemiroff
Berglund Robert K.
Mautz Karl E.
Barbee Joe E.
Motorola Inc.
Powell William A.
LandOfFree
Sloped contact etch process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sloped contact etch process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sloped contact etch process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1614348