Sloped contact etch process

Details Sloped contact etch process Sloped contact etch process

1989-05-23

1990-02-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156651, 156653, 156655, 156657, 1566591, 20419236, 20419237, 437195, 437203, 437238, 437241, B44C 122, C03C 1500, C03C 2506, B29C 3700

Patent

active

049023772

ABSTRACT:
A method for etching vias having sloped sidewalls is provided, wherein the vias are formed in an interlayer dielectric formed on top of an interconnect layer using a patterned photoresist film as a mask. A top portion of the via is formed with a wet etch process which isotropically undercuts the masking film thereby creating a sloped sidewall. A bottom portion of the via is formed by a dry etch process comprising the steps of alternating between a number of isotropic mask erosion steps and a number of anisotropic dielectric etch steps, so that the interlayer dielectric exposed to the anisotropic etch by the mask opening is enlarged with each mask erosion step. Thus, a slope is created on the dry etched portion of the via sidewall as well as the wet etched portion of the via sidewall.

REFERENCES:
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4698128 (1987-10-01), Berglund et al.
patent: 4715930 (1987-12-01), Diem
patent: 4832788 (1989-05-01), Nemiroff

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