Skewed sense AMP for variable resistance memory sensing

Details Skewed sense AMP for variable resistance memory sensing Skewed sense AMP for variable resistance memory sensing

2005-05-03

2005-05-03

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S207000, C365S190000

Reexamination Certificate

active

06888771

ABSTRACT:
A variable resistance memory sense amplifier has a built-in offset to assist in switching the sense amplifier when a resistive memory cell is in a low resistance state. The built-in offset can be achieved by varying size, threshold voltage, associated capacity or associated resistance of the transistors within the sense amplifier.

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