Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1993-05-07
1994-02-15
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Differential sensing
365185, 36518909, G11C 702, G11C 1134
Patent
active
052873153
ABSTRACT:
A structure and method for improving the sense margin of nonvolatile memories is disclosed. An improvement to the sense margin of nonvolatile memories is accomplished by improving the margin both for "ones" at low control gate voltage Vcc and for "zeros" at high control gate voltage Vcc. Improvement in sensing at low control gate voltages Vcc is accomplished by skewing the sense amplifier response characteristics by forming the channel length of the reference memory cell to have a longer channel length than the memory cells of the array.
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Breashears Eddie H.
Dolby Debra J.
MacPeak John H.
McElroy David J.
Schreck John F.
Donaldson Richard L.
Heiting Leo N.
Kessell Michael C.
LaRoche Eugene R.
Lindgren Theodore D.
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