Skewed memory cell apparatus and method

Static information storage and retrieval – Systems using particular element – Flip-flop

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365233, 36523005, 365156, G11C 800

Patent

active

059010797

ABSTRACT:
An improved random-access memory apparatus and method for rapidly reading and writing high-level logic data to and fiom the random-access memory apparatus during phase-driven timing cycles. The improved random-access memory apparatus includes an unbalanced storage circuit for the evanescent storage of binary data, and includes two opposing logic inverters coupled together such that high level logic data can be rapidly written to the unbalanced storage circuit during a write cycle. A first logic inverter is sized larger than a second logic inverter. In addition, the improved random-access memory apparatus includes a circuit for reading and writing binary data to and from the unbalanced storage circuit. The circuit for reading and writing binary data to and from the unbalanced storage circuit operates in a cycle which includes clock phases carried on a phase line to the circuit for reading and writing binary data to and from the unbalanced storage circuit. The first logic inverter included within the unbalanced storage circuit is preferably a high-performance type of logic inverter type and the second logic inverter is preferably of a type weak in its ability to drive a binary logic signal. The unbalanced storage circuit preferably operates in a cycle which includes four clock phases carried on the phase line to the circuit for reading and writing binary data to and from the unbalanced storage circuit.

REFERENCES:
patent: 4571709 (1986-02-01), Skupnjak et al.
patent: 4799194 (1989-01-01), Arakawa
patent: 5007022 (1991-04-01), Leigh
patent: 5065363 (1991-11-01), Sato
patent: 5388249 (1995-02-01), Hotta et al.
patent: 5509134 (1996-04-01), Fandrich
patent: 5590087 (1996-12-01), Chung

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Skewed memory cell apparatus and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Skewed memory cell apparatus and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Skewed memory cell apparatus and method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1874650

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.