Site-specific nanoparticle self-assembly

Details Site-specific nanoparticle self-assembly Site-specific nanoparticle self-assembly

2008-05-06

2008-05-06

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S197000, C438S778000, C438S785000, C257SE21051, C257SE21135, C977S840000

Reexamination Certificate

active

07368370

ABSTRACT:
Disclosed herein are methods of self-assembling nanoparticles on specific sites of a substrate. The method generally includes introducing a p-type dopant species to at least a portion of an n-type substrate or introducing an n-type dopant species to at least a portion of a p-type substrate, wherein the dopant species creates a surface charge opposite in polarity to that of the substrate surface prior to the introducing; contacting the nanoparticles with the surface of the substrate; and self-assembling a layer of the nanoparticles on p-type regions of the substrate. The methods described herein may be used in the formation of sub-22 nanometer channels, which find use in field-effect transistors, electronic chips, nanoscale biosensors, photonic band gap devices, lasers in optoelectronics and photonics chips, as well as nano-electro-mechanical devices (NEMS).

REFERENCES:
patent: 6303516 (2001-10-01), Morita et al.
patent: 7208793 (2007-04-01), Bhattacharyya
patent: 2004/0033679 (2004-02-01), Jacobson et al.

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