Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-04-26
2005-04-26
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
With measuring or testing
C438S197000, C438S902000
Reexamination Certificate
active
06884641
ABSTRACT:
This invention relates to a method for electrically localizing site-specific defective sub 130 nm node MOSFET devices with shallow (less than 80 nm deep) source/drain junctions utilizing bulk silicon, or Silicon on Insulator (SOI), or strained silicon (SE), followed by optimized sample preparation steps that permits imaging, preferably high resolution electron holographic imaging, in an electron microscope to detect blocked implants, asymmetric doping, or channel length variations affecting MOSFET device performance. Detection of such defects in such shallow junctions enables further refinements in process simulation models and permits optimization of MOSFET device designs.
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Bruley John
Kane Terence
Tenney Michael P.
Wang Yun Yu
Dang Phuc T.
DeLio & Peterson LLC
Jacklitsch Lisa U.
Reynolds Kelly M.
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