Sintered aluminum nitride and circuit substrate using sintered a

Details Sintered aluminum nitride and circuit substrate using sintered a Sintered aluminum nitride and circuit substrate using sintered a

1995-08-30

1997-06-24

Edwards, Newton

Compositions: ceramic

Ceramic compositions

Refractory

501123, 501152, 501153, 501154, 428210, 428446, 428688, 428689, 428704, C04B 3558, C04B 3503, B32B 700

Patent

active

056417187

ABSTRACT:
Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.

REFERENCES:
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patent: 4407970 (1983-10-01), Komatsu et al.
patent: 4719187 (1988-01-01), Bardham et al.
patent: 4883780 (1989-11-01), Kasori et al.
patent: 4923829 (1990-05-01), Yasutomi
patent: 5001089 (1991-03-01), Kasori et al.
patent: 5242872 (1993-09-01), Taniguchi et al.
patent: 5424261 (1995-06-01), Harris et al.

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