Single wafer processing method and system for processing...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S778000, C438S478000

Reexamination Certificate

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06924231

ABSTRACT:
Process operations are performed for subjecting target substrates respectively to a semiconductor process, while a target substrate is placed on a worktable within a process chamber, and the worktable is heated by a temperature control member to heat the target substrate. The reflection coefficient within the process chamber is changed depending on deposition of a by-product, which is generated during the semiconductor process on the target substrate, within the process chamber. A parameter representing the reflection coefficient within the process chamber is measured, between the first and last ones of the process operations. The set temperature of the worktable used in the semiconductor process is adjusted, based on measured value of the parameter, during process operations performed after measuring the parameter. As a consequence, repeatability of the semiconductor process is improved.

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patent: 6171641 (2001-01-01), Okamoto et al.
patent: 6573185 (2003-06-01), Kariya
patent: 831519 (1998-03-01), None
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patent: 4-48724 (1992-02-01), None
patent: 4-206524 (1992-07-01), None
patent: 5-217930 (1993-08-01), None

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