Single transistor non-volatile electrically alterable semiconduc

Details Single transistor non-volatile electrically alterable semiconduc Single transistor non-volatile electrically alterable semiconduc

1994-12-01

1996-02-20

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257324, 257368, 257639, 257649, H01L 2976

Patent

active

054931380

ABSTRACT:
An improved electrically programmable and erasable memory device having a plurality of addressable single transistor cells, each transistor having spaced source and drain regions, a floating gate and a control gate. The improvement is a new tunneling insulator layer structure between the floating gate and the control gate. The improved tunneling layer is a dual layer formed of a outer silicon oxide layer and an inner silicon oxynitride layer.

REFERENCES:
patent: 5063431 (1991-11-01), Ohshima
patent: 5067108 (1991-11-01), Jenq

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