Single-transistor logic and CMOS inverters

Details Single-transistor logic and CMOS inverters Single-transistor logic and CMOS inverters

1997-02-04

1998-09-15

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257139, 257141, H01L 2976, H01L 2974, H01L 31111

Patent

active

058083448

ABSTRACT:
A dual transistor CMOS inverter can be built wherein a single gate is shared by two MOS transistors but only one transistor can be turned on at a time. A CMOS inverter function is provided. Further, a dual transistor logic function is described incorporating a combination of a lateral bipolar transistor (LBT) and a metal-oxide-semiconductor transistor (MOST). The gate of the MOST is used to turn on and off the base of the LBT. When the base is turned on, the LBT is turned on and off depending on the base voltage. This device has, thus, two inputs and can perform logic functions such as OR or NAND, which would typically require four transistors. The invention solves the problem of device density to perform logic by forming stacked devices with shared electrodes.

REFERENCES:
patent: 5315143 (1994-05-01), Tsuji
patent: 5534713 (1996-07-01), Ismail et al.

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