Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-11-25
1994-03-15
Mentel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257315, 257321, 257322, 365185, 36518901, 36523001, H01L 2978
Patent
active
052948196
ABSTRACT:
The present invention discloses methods and apparatus for implementing a single-transistor cell EEPROM array for analog or digital storage. The single-transistor storage cell is made possible by continuously maintaining a net negative charge on the floating gate of the EEPROM storage transistor. Furthermore, according to the present invention, a dense layout of the single-transistor cells is possible by sharing a common diffusion region between the transistors located in the same row and the transistors located in one adjacent row. This common diffusion region functions as a source in the erase and program modes, and as a drain in the read mode. Moreover, the common diffusion feature of the present invention allows the use of a single level of metal in distributing the various operating voltages to the EEPROM storage transistors. Further, utilizing a single level of metal allows for a simple and dense fabrication and also reduces the parasitic capacitances in the EEPROM storage array. Array operating voltages are chosen such that "program disturbance" is eliminated on cells adjacent to a cell undergoing programming. Finally, the present invention utilizes only a single polarity of operating voltages.
REFERENCES:
patent: 3984822 (1976-10-01), Simko et al.
patent: 4099196 (1978-09-01), Simko
patent: 4119995 (1978-10-01), Simko
patent: 4314265 (1982-02-01), Simko
patent: 4701776 (1987-10-01), Perlegos et al.
patent: 4890259 (1989-12-01), Simko
Nonvolatile Memories, A 5V-Only 256k bit CMOS Flash EEPROM, International Solid-State Circuits Confreence (ISSCC) Digest of Technical Papers, pp. 108-109, Sebastiano D'Arrigo et al., 1982.
Nonvolatile Memories, A 16k E.sup.2 PROM, International Solid-state Circuits Confreence (ISSCC) Digest of Technical Papers, pp. 132-133, Giora Yaron et al., 1989.
Information Storage Devices
Mentel William
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