Single step salicidation process

Fishing – trapping – and vermin destroying

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437192, H01L 2128

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active

052866785

ABSTRACT:
The present invention generally involves the fabrication of semiconductor devices so as to reduce the active region to interconnect interface resistivity. Fabrication begins by forming active regions on a semiconductor device. Next, a titanium metal of approximately 900 .ANG. thickness is deposited on the semiconductor device. The semiconductor device is then annealed in a single step to form the interconnects.

REFERENCES:
patent: 4551908 (1985-11-01), Nagasawa et al.
patent: 4845055 (1989-07-01), Ogata
patent: 4877748 (1989-10-01), Havemann
patent: 4940509 (1990-07-01), Tso et al.
patent: 4966868 (1990-10-01), Murali et al.
patent: 5023201 (1991-06-01), Stanasolovich et al.
patent: 5043300 (1991-08-01), Nulman
N. de Lanerolle, D. Hoffman, and D. Ma, "Titanium silicide growth by rapid-thermal processing of Ti films deposited on lightly doped and heavily doped silicon substrates," J. Vac. Sci. Technol. B5(6), pp. 1689-1695 (Nov./Dec. 1987).
D. Pramanik, M. Deal and A. N. Saxena, "Formation of Titanium Silicide by Rapid Thermal Annealing," Semiconductor International, pp. 94-100 (May 1985).
W. Bensch et al., "The Formation of Ti Silicides by Rapid Thermal Procesing: . . . " Reactivity of Solids, vol. 7, No. 3, Aug. 1989, pp. 249-262.
Okamoto et al., "Ti Silicidation by Halogen Lamp Annealing", Mat. Res. Soc. Symp. Proc, vol. 35, 1985, pp. 471-476.
Billson et al., "Ti-Si and SiO.sub.2 Reactions Controlled by Low Temp. RTA", J. Vac. Sci. and Technol. A, Proc. of the 32nd Symposium of American Vacuum Society, vol. 4, No. 3, pt. 1, 1986, pp. 993-997.

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