Single SOI wafer accelerometer fabrication process

Details Single SOI wafer accelerometer fabrication process Single SOI wafer accelerometer fabrication process

2011-07-12

2011-07-12

Culbert, Roberts (Department: 1716)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S099000, C438S689000

Reexamination Certificate

active

07976714

ABSTRACT:
Methods for producing a MEMS device from a single silicon-on-insulator (SOI) wafer. An SOI wafer includes a silicon (Si) handle layer, a Si mechanism layer and an insulator layer located between the Si handle and Si mechanism layers. An example method includes etching active components from the Si mechanism layer. Then, the exposed surfaces of the Si mechanism layer is doped with boron. Next, portions of the insulator layer proximate to the etched active components of the Si mechanism layer are removed and the Si handle layer is etched proximate to the etched active components.

REFERENCES:
patent: 6410361 (2002-06-01), Dhuler et al.
patent: 7138694 (2006-11-01), Nunan et al.
patent: 7190007 (2007-03-01), Breitwisch et al.

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