Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-05-22
1994-06-07
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 15, 257 94, 257103, 372 45, H01L 3300
Patent
active
053192192
ABSTRACT:
A single quantum well II-VI laser diode without semiconductor cladding layers includes a pn junction formed by overlaying light-guiding layers of p-type and n-type ZnSe on an n-type GaAs substrate. A CdSe/ZnSe short-period strained-layer superlattice single quantum well active layer is positioned between the guiding layers. An Au electrode overlays the p-type guiding layer opposite the single quantum well active layer. The guiding layers have thicknesses which enable the substrate and Au electrode to confine the light beam generated by the device within the active layer and the guiding layers.
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Cheng Hwa
DePuydt James M.
Haase Michael A.
Qiu Jun
Griswold Gary L.
Kirn Walter N.
Minnesota Mining and Manufacturing Company
Mintel William
Sherman Lorraine R.
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