Single polysilicon layer flash E.sup.2 PROM cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257315, 257321, 257322, H01L 27115, H01L 29788

Patent

active

058863788

ABSTRACT:
A flash E.sup.2 PROM cell includes a single polysilicon layer part of which makes up the floating gate of a transistor of the cell, part of which makes up an electrode of a capacitor coupled to the floating gate, and part of which makes up the gate of a second transistor of the cell.

REFERENCES:
patent: 3952325 (1976-04-01), Beale et al.
patent: 4425631 (1984-01-01), Adam
patent: 4924278 (1990-05-01), Logie
H. Kume, et al., "A 1.28 .mu.m.sup.2 Contactless Memory Cell Technology for a 3V-Only 64Mbit EEPROM", IEDM Dec. 1992 991-993 pp. 24.7.1 to 24.7.3.

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