Single poly memory cell and array

Details Single poly memory cell and array Single poly memory cell and array

1996-09-18

1998-08-04

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257324, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

057897760

ABSTRACT:
A non-volatile memory cell array using only a single level of polysilicon and a single level of metal has programmable single transistor memory cells on a semiconductor substrate of a first conductivity type, a well of a second conductivity type in the substrate, parallel bitlines oriented in a first direction, and reference line segments oriented in the first direction. Each reference line is paired with one of each bitline. The array also has parallel word lines oriented in a second direction to form an array of intersections with the pairs of bitline/reference line pairs, and a rewriteable single transistor memory cell at each intersection point.

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