Single poly BiCMOS flash cell with floating body

Details Single poly BiCMOS flash cell with floating body Single poly BiCMOS flash cell with floating body

2006-04-05

2008-11-11

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27015

Reexamination Certificate

active

07449754

ABSTRACT:
A BiCMOS integrated circuit (IC) includes a floating gate-type non-volatile memory (NVM) device that uses the polycrystalline silicon gate of a CMOS FET and the P-base and N-emitter diffusions of a bipolar transistor to provide an isolated P-type body and N-type source/drain diffusions. The P-body diffusion of the NVM device is isolated from a P-substrate by an N-well, thus facilitating the use of reduced positive and negative voltage levels to produce the onset of Fowler-Nordheim tunneling without the need for a triple-well structure. The polysilicon gate structure is formed on a suitable gate oxide over the P-body. The source/drain diffusions, which like the N-emitter diffusions of the bipolar transistor have no LDD, produce a reduced field drop across the gate oxide to allow Fowler-Nordheim tunneling from the source side.

REFERENCES:
patent: 5248624 (1993-09-01), Icel et al.
patent: 5838048 (1998-11-01), Hirai et al.

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