Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-07
2005-06-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S200000, C257S471000, C257S484000
Reexamination Certificate
active
06903413
ABSTRACT:
The invention relates to a vertical-type single-pole component, comprising regions (34) with a first type of conductivity (P) which are embedded in a thick layer (32) with a second type of conductivity (N). Said regions are distributed over at least one same horizontal level and are independent of each other. The regions also underlie an insulating material (70).
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English Translation Of The International Preliminary Examination Report from the corresponding PCT application No. PCT/FR00/03655.
International Search Report from patent application No. PCT/FR 00/03655, filed Dec. 21, 2000.
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Jorgenson Lisa K.
Morris James H.
Nelms David
Nguyen Dao H.
STMicroelectronics S.A.
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