Single passivation layer scheme for forming a fuse

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state

Reexamination Certificate

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Reexamination Certificate

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07811866

ABSTRACT:
An integrated circuit structure comprising a fuse and a method for forming the same are provided. The integrated circuit structure includes a substrate, an interconnection structure over the substrate, a fuse connected to the interconnection structure, and an anti-reflective coating (ARC) on the fuse. The ARC has an increased thickness and acts as a remaining oxide, and no further remaining passivation layer exists on the ARC.

REFERENCES:
patent: 6294474 (2001-09-01), Tzeng et al.
patent: 2003/0153173 (2003-08-01), Chuang
patent: 2005/0142834 (2005-06-01), Lee
patent: 583728 (2004-04-01), None

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