Single P-sense AMP circuit using depletion isolation devices

Details Single P-sense AMP circuit using depletion isolation devices Single P-sense AMP circuit using depletion isolation devices

1995-06-23

1996-09-03

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365207, G11C 700

Patent

active

055530281

ABSTRACT:
An integrated circuit dynamic memory is described which shares a p-sense amplifier between two memory arrays. More specifically, a dynamic random access memory (DRAM) is disclosed which uses n-channel depletion transistors to couple the shared p-sense amplifier to two memory arrays. The depletion transistors use a gate voltage equal to the power supply potential to perform a complete write-back operation on one memory array and use a negative potential to isolate the p-sense amp from the other memory array.

REFERENCES:
patent: 5245578 (1993-09-01), McLaury
patent: 5265050 (1993-11-01), McLaury
patent: 5294585 (1993-12-01), Suyama et al.
patent: 5311478 (1994-05-01), Zagar et al.
patent: 5313431 (1994-05-01), Uruma et al.
patent: 5323350 (1994-06-01), McLaury
patent: 5369622 (1994-11-01), McLaury

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