Single mask via method and device

Details Single mask via method and device Single mask via method and device

2005-03-15

2005-03-15

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Insulative housing or support

C438S106000, C438S455000, C438S456000, C438S459000, C438S618000, C438S620000, C438S637000, C438S666000

Reexamination Certificate

active

06867073

ABSTRACT:
A method of connecting elements such as semiconductor devices and a device having connected elements such as semiconductor devices. A first element having a first contact structure is bonded to a second element having a second contact structure. A single mask is used to form a via in the first element to expose the first contact and the second contact. The first contact structure is used as a mask to expose the second contact structure. A contact member is formed in contact with the first and second contact structures. The first contact structure may have an aperture or gap through which the first and second contact structures are connected. A back surface of the first contact structure may be exposed by the etching.

REFERENCES:
patent: 6218203 (2001-04-01), Khoury et al.
patent: 6515343 (2003-02-01), Shroff et al.
patent: 6656826 (2003-12-01), Ishimaru
patent: 6720212 (2004-04-01), Robl et al.
patent: 20020094661 (2002-07-01), Enquist et al.
patent: 20030109083 (2003-06-01), Ahmad
patent: 20030129796 (2003-07-01), Bruchhaus et al.

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