Single mask control of doping levels

Details Single mask control of doping levels Single mask control of doping levels

2006-05-02

2006-05-02

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S134000, C438S139000, C438S140000

Reexamination Certificate

active

07037814

ABSTRACT:
In an integrated circuit, dopant concentration levels are adjusted by making use of a perforated mask. Doping levels for different regions across an integrated circuit can be differently defined by making use of varying size and spacings to the perforations in the mask. The diffusion of dopant is completed by making use of an annealing stage.

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