Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-02
1999-07-27
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
259315, 259324, H01L 2976, H01L 2988, H01L 29792
Patent
active
059294787
ABSTRACT:
A single level gate NVM device (20) includes a floating gate FET (11) and a capacitor (12) fabricated in two P-wells (27, 28) formed in an N-epitaxial layer (22) on a P-substrate (21). P+ sinkers (29, 31) and N-type buried layers (25, 26) provide isolation between the two P-wells (27, 28). The NVM device (20) is programmed or erased by biasing the FET (11) and the capacitor (12) to move charge carriers onto or away from a conductive layer (36) which serves as a floating gate (14) of the FET (11). Data is read from the NVM device (20) by sensing a current flowing in the FET (11) while applying a reading voltage to the capacitor (12).
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Buxo Juan
Carman Eric Scott
Nguyen Quang Xuan
Pages Irenee M.
Parris Patrice Michael
Motorola Inc.
Nguyen Cuong Q
Seddon Kenneth M.
Thomas Tom
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