Single layer polysilicon EEPROM having uniform thickness gate ox

Details Single layer polysilicon EEPROM having uniform thickness gate ox Single layer polysilicon EEPROM having uniform thickness gate ox

1994-12-16

1995-08-08

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257300, 257321, 365185, H01L 2968, H01L 2978

Patent

active

054401593

ABSTRACT:
An EEPROM transistor fabricated with a single polysilicon layer. An MOS transistor is fabricated with a subsurface electrode region defined by a stripe in a first direction. A layer of thin oxide is arranged in a second stripe, perpendicular to the first stripe and a polysilicon layer, arranged in a third stripe is disposed over the second stripe of thin oxide. An adjoining parallel plate capacitor is formed by a subsurface region of the same conductivity type as the subsurface electrodes in the first stripe. An insulative second plate of thin oxide is joined to the second stripe and a third plate of the capacitor is formed by a polysilicon plate over the oxide plate. Vertical metallization stripes in the first direction may contact with some components, while parallel metal stripes in a second layer in a perpendicular direction may contact with the remaining members. The stripe geometry allows lateral and vertical four-way symmetry for implementation of a large number of memory storage cells on a chip or wafer.

REFERENCES:
patent: 4288863 (1981-09-01), Adam
patent: 4807003 (1989-02-01), Mohammadi et al.
patent: 4823316 (1989-04-01), Riva
patent: 4935790 (1990-06-01), Cappelletti et al.
patent: 5081054 (1992-01-01), Wu et al.
patent: 5132239 (1992-07-01), Ghezzi et al.
patent: 5282161 (1994-01-01), Villa

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