Single layer polycrystalline silicon split-gate EEPROM cell havi

Details Single layer polycrystalline silicon split-gate EEPROM cell havi Single layer polycrystalline silicon split-gate EEPROM cell havi

1995-08-21

1998-12-01

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, H01L 29788

Patent

active

058442715

ABSTRACT:
An electrically-erasable programmable read-only memory (EEPROM) cell includes a split-gate read transistor and a buried N-plate control gate. The split gate transistor includes a drain and source regions formed in a P-type silicon substrate with a channel formed therebetween. Silicon dioxide is disposed over the drain, channel and source regions wherein the oxide overlying the drain and a portion of the channel is thicker compared to the thickness of the oxide overlying the remainder of the channel and the source. A layer of polycrystalline silicon is disposed over the channel. The buried N-plate control gate is spaced laterally from the source, drain, and channel regions. The floating gate overlying the channel extends also over the buried N-plate control gate. The split gate structure effectively realizes a pair of in-series gates, each having a different threshold voltage in accordance with the thickness of the oxide used. The voltages applied to the N-plate region are capacitively coupled to the floating gate. The potential on the floating gate in turn causes activation of the transistors formed by the split-gate structure, depending on the existing charge on the floating gate.

REFERENCES:
patent: 3719866 (1973-03-01), Naber et al.
patent: 4611308 (1986-09-01), Lonky
patent: 4642881 (1987-02-01), Matsukawa et al.
patent: 4649520 (1987-03-01), Eitan
patent: 4870304 (1989-09-01), Bloker et al.
patent: 4935802 (1990-06-01), Noguchi et al.
patent: 4970565 (1990-11-01), Wu et al.
patent: 5258634 (1993-11-01), Yang
patent: 5284786 (1994-02-01), Sethi
patent: 5323039 (1994-06-01), Asano et al.
patent: 5326999 (1994-07-01), Kim et al.
patent: 5343424 (1994-08-01), Chang et al.
patent: 5404037 (1995-04-01), Manley
patent: 5427968 (1995-06-01), Hong
patent: 5502321 (1996-03-01), Matsushita

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