Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1996-07-22
1999-02-09
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438172, 438180, 438571, 438577, H01L 21338
Patent
active
058693645
ABSTRACT:
A method for fabricating a periodic table group III-IV metal semiconductor metal field-effect transistor device is described. The disclosed fabrication arrangement uses a single metalization for ohmic and Schottky barrier contacts, employs selective etching with a permanent etch stop layer, employs a non-alloyed ohmic contact semiconductor layer and includes a permanent non photosensitive secondary mask element. The invention includes provisions for both an all optical lithographic process and a combined optical and electron beam lithographic process. These concepts are combined to provide a field-effect transistor device of reduced fabrication cost, increased dimensional accuracy and state-of-the-art electrical performance.
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Bozada Christopher A.
DeSalvo Gregory C.
Dettmer Ross W.
Ebel John L.
Gillespie James K.
Hollins Gerald B.
Kundert Thomas L.
Nguyen Tuan H.
The United States of America as represented by the Secretary of
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