Single gate nonvolatile memory cell with transistor and...

Details Single gate nonvolatile memory cell with transistor and... Single gate nonvolatile memory cell with transistor and...

2011-08-16

2011-08-16

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257SE27081, C257SE21645, C438S239000

Reexamination Certificate

active

07999296

ABSTRACT:
A nonvolatile memory integrated circuit has a semiconductor substrate and a nonvolatile memory device on the semiconductor substrate. The device has a transistor and a capacitor on the semiconductor substrate, and a shared floating gate connecting the gate regions of the transistor and the capacitor. The transistor has at least a doping region defining the source and drain regions, as well as three other doping regions overlapping the source and drain regions. Also disclosed are a nonvolatile memory circuit with multiple such nonvolatile memory device, and methods for making the nonvolatile memory circuit with one or more such nonvolatile memory devices.

REFERENCES:
patent: 7099192 (2006-08-01), Wang et al.
patent: 2006/0022255 (2006-02-01), Yao et al.
patent: 2006/0118856 (2006-06-01), Lojek
patent: 2006/0199334 (2006-09-01), Park et al.
patent: 2006/0267071 (2006-11-01), Carver et al.

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